Quantification of Ge and B in SiGe using secondary ion mass spectrometry

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 111-114

  Ehrke, H Ulrich ^a   Maul, Hans ^a  

^a Thermo Fisher Scientific   (United States)

Author keywords

Boron, carbon, arsenic, germanium distribution; Depth profiling; Normal incidence oxygen sputtering; OCE (optical conductivity enhancement); Production monitoring; SiGe analysis; SIMS

Indexed keywords

ARSENIC; BORON; CARBON; GERMANIUM; PROCESS CONTROL; PRODUCTION CONTROL; SILICON COMPOUNDS; SPUTTERING;

BORON, CARBON, ARSENIC, GERMANIUM DISTRIBUTION; DEPTH PROFILING; NORMAL-INCIDENCE OXYGEN SPUTTERING; OPTICAL CONDUCTIVITY ENHANCEMENT (OCE); PRODUCTION MONITORING; SIGE ANALYSIS;

SECONDARY ION MASS SPECTROMETRY;

EID: 13244270138     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.059     Document Type: Conference Paper

References (7)

1. B.S. Meyerson IBM J Res Dev 44 3 2000
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4. Patel S, Hunter J. Proceed SIMS IVX, to be published.
5. Zastrow U, Fölsch J, Mück A, Schmidt K, Vescan L, Proceed of the 10th international conference on secondary ion mass spectrometry - SIMS X. Chichester: Wiley; 1997. p. 541-4.
6. D. Krüger, A.A. Efremov, J. Murota, R. Kurps, E. Bugiel, and B. Tillack Romanova GPh, Surf Interface Anal 33 2002 663 671
7. Ehrke H.-Ulrich, Maul H. Proceed SIMS IVX, to be published.