Initial growth behaviors of SiGeC in SiGe and C alternate deposition

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 5-9

  Takeuchi, Shotaro ^a   Nakatsuka, Osamu ^a   Wakazono, Yasunobu ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Direct observation; MBE; SiGeC; STM; Surface reconstruction

Indexed keywords

DIRECT OBSERVATION; SIGEC; SURFACE RECONSTRUCTION; THERMAL EQUILIBRIUM;

CARBON; CONDENSATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; PHASE SEPARATION; SCANNING TUNNELING MICROSCOPY; SOLUBILITY; SURFACES; THERMAL EFFECTS; THIN FILMS;

SILICON COMPOUNDS;

EID: 13244262985     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.028     Document Type: Conference Paper

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