Deconvolution of SIMS depth profiles of as multiple delta layers in silicon

Surface and Interface Analysis

Volumn 37, Issue 2, 2005, Pages 176-180

  Lee, J W ^a   Kim, K J ^b   Kim, H K ^b   Moon, D W ^b  

^a Hallym University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Arsenic; Deconvolution; MEIS; Silicon; SIMS

Indexed keywords

ARSENIC; GAIN CONTROL; ION BEAMS; OPTICAL RESOLVING POWER; SCATTERING; SECONDARY ION MASS SPECTROMETRY; SILICON; SPECTROSCOPIC ANALYSIS; SPUTTERING;

DECONVOLUTION; DEPTH PROFILES; ION SCATTERING; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEIS);

MULTILAYERS;

EID: 13244260936     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1958     Document Type: Conference Paper

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