Imprint lithography issues in the fabrication of high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3271-3274

  Thoms, S ^a   Macintyre, D S ^a   Moran, D ^a   Thayne, I ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EVAPORATION; FRACTURE; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; METALLIZING; MULTILAYERS; NANOTECHNOLOGY; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY;

MULTILAYER RESISTS; NANOIMPRINT LITHOGRAPHY (NIL); STEP AND FLASH IMPRINT LITHOGRAPHY (SFIL); T-GATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13244257275     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1821504     Document Type: Conference Paper

References (10)

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