Growth of high purity AlN crystals

Journal of Crystal Growth

Volumn 34, Issue 2, 1976, Pages 263-279

  Slack, Glen A ^a   McNelly, T F ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13144259759     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(76)90139-1     Document Type: Article

References (230)

1. Optical Absorption Edge of AIN Single Crystals
2. Refraction Index Measurements on AlN Single Crystals
3. Some Properties of Aluminum Nitride
4. Microhardness of Single Crystals of BeO and Other Wurtzite Compounds
5. Infrared Absorption of AIN in the One-Phonon Region and Finite Size Effects
6. Infrared Absorption of AlN Single Crystals in the Two-Phonon Region
7. Aluminum Nitride, a Refractory for Aluminum to 2000oC.
8. �ber Aluminiumnitrid
9. Die Reaktionen des Aluminiumnitrids
10. Zur Darstellung von Aluminiumnitrid aus den Elementen
11. �ber das Wachstum und die Struktur d�nner Oxydschichten auf Aluminium
12. The Oxidation of Aluminium in Dry and Humid Oxygen Atmospheres
13. Preparation of Aluminum Phosphide by Solution-Growth Method
14. Ueber das Stickstoffmagnesium und die Affinitäten des Stickgases zu Metallen
15. Preparation of Aluminum Nitride by Electric Arc Method
16. Zur Darstellung von Metallnitriden aus Ammoniumfluorometallaten und Ammoniak
17. Der Dampfdruck von ZnF2, CdF2, MgF2, CaF2, SrF2, BaF2, AlF3
18. The Enthalpy of Formation and Entropy of Aluminum(I) Fluoride(g)
19. Preparation of Pure Anhydrous Aluminum Fluoride by Vacuum Sublimation
20. Beitr�ge zur systematischen Verwandtschaftslehre. XLV. �ber Reaktionserm�glichung durch Gitterweitung und �ber Ammoniakate der Fluoride
21. Effect of environment upon the melting point of Al2O3
22. The structures of the aluminum carbonitrides
23. The structure of the aluminum carbonitrides. II
24. Some Properties of Aluminum Nitride
25. On the Preparation of the Nitrides of Aluminum and Gallium
26. Über phosphorescenzfähiges, durch Silicium aktiviertes Aluminiumnitrid
27. Electrical conductivity of materials from mixed aluminum and silicon nitrides
28. Inorg. Mater.
29. Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental Parameters
30. Luminescence in the System Al[sub 2]O[sub 3]-AIN
31. The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
32. Mass Spectrometric Determination of the Heat of Formation of the AlO2 Molecule
33. Mass-spectrometric determination of the heat of atomization of the molecules Al2N and BOCN
34. Reaction between Refractory Metals and Insulating Nitrides at High Temperature
35. Über Wachstum von AIN-Einkristallen aus der Dampfphase
36. Morphologie und Wachstumsmechanismus von AIN-Einkristallen
37. Über Züchtung und Morphologie von AIN-Einkristallen
38. Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem Aufwachsverfahren
39. Inorg. Mater.
40. Properties of Aluminum Nitride Derived from AlCl[sub 3][middle dot]NH[sub 3]
41. The Use of Metalorganics in the Preparation of Semiconductor Materials
42. Chemischer transport im nichtisothermen plasma; bildung von ain- und tin-kristallen
43. Herstellung dünner Schichten von Aluminium-, Gallium- sowie Indiumnitrid unter einer Gasentladung
44. Synthesis of Nitrides Using Plasma Flame
45. Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride
46. Preparation of A1N Thin Films by Reactive R-F Sputtering and their Properties
47. An AlN Switchable Memory Resistor Capable of a 20-MHz Cycling Rate and 500-picosecond Switching Time
48. GROWTH MECHANISM OF WHISKERS AND NEEDLE CRYSTALS (PRISMS) OF ALUMINUM NITRIDE
49. Phase equilibria pertinent to the growth of cubic boron nitride