Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content

Electronics Letters

Volumn 35, Issue 12, 1999, Pages 998-999

  Tsujimura, A ^a   Hasegawa, Y ^a   Ishibashi, A ^a   Kamiyama, S ^a   Kidoguchi, I ^a   Miyanaga, R ^a   Suzuki, M ^a   Kume, M ^a   Harafuji, K ^a   Ban, Y ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; GAIN CONTROL; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; THRESHOLD VOLTAGE;

AMPLIFIED SPONTANEOUS EMISSION (ASE) SPECTRA; MULTIQUANTUM WELL LASER DIODES; ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATIONS;

QUANTUM WELL LASERS;

EID: 13044276227     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990679     Document Type: Article

References (4)

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2. CHICHIBU, S., AZUHATA, T., SOTA, T., and NAKAMURA, S.: 'Luminescences from localized states in InGaN epilayers', Appl. Phys. Lett., 1997, 70, pp. 2822-2824
3. TAKEUCHI, T., TAKEUCHI, H., SOTA, S., SAKAI, H., AMANO, H., and AKASAKI, I.: 'Optical properties of strained AlGaN and GaInN on GaN', Jpn. J. Appl. Phys., 1997, 36, pp. L177-L179
4. SHAKLEE, K.L., and LEHENY, R.F.: 'Direct determination of optical gain in semiconductor crystals', Appl. Phys. Lett., 1971, 18, pp. 475-477