Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Iwata, Hisaomi ^a   Itoh, Kohei M ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; NITROGEN; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ELECTRON HALL MOBILITY;

SILICON CARBIDE;

EID: 12944301123     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)

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