Effects of strong correlations in single electron traps in field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 4, Issue 1, 2005, Pages 90-95

  Mozyrsky, Dima ^a   Martin, Ivar ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Impurities; Magnetoelectric effects; MOS devices; Tunneling

Indexed keywords

CRYSTAL LATTICES; ELECTRON TUNNELING; IMPURITIES; MAGNETIC FIELDS; MAGNETOELECTRIC EFFECTS; MATHEMATICAL MODELS; MOS DEVICES; PHONONS;

CHEMICAL POTENTIAL; CONDUCTION ELECTRONS; EFFECTIVE MASS; MOMENTUM;

FIELD EFFECT TRANSISTORS;

EID: 12944295091     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.840162     Document Type: Conference Paper

References (14)

1. K. S. Rails, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, "Discrete resistance switching in submicrometer silicon inversion layers," Phys. Rev. Lett., vol. 52, pp. 228-231, 1984.
2. D. H. Cobden and B. A. Muzykantskii, "Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals," Phys. Rev. Lett., vol. 75, pp. 4274-4277, 1995.
3. G. Ghibaudo and T. Boutchacha, "Electrical noise and RTS fluctuations in advanced CMOS devices," Microelectron. Reliabil., vol. 42, pp. 573-582, 2002.
4. D. Mozyrsky, I. Martin, A. Shnirman, and M. B. Hastings. (2003) Renormalization of resonant tunneling in MOSFETs. cond-mat/0312503. [Online] xxx.lanl.gov
5. M. Xiao, I. Martin, and H. W. Jiang, "Probing the spin state of a single electron by random telegraph signal," Phys. Rev. Lett., vol. 91, pp. 078 301(1)-078 301(4), 2003.
6. D. R. Hamann, "Path integral theory of magnetic alloys," Phys. Rev. B, Condens. Matter, vol. 2, pp. 1373-1392, 1970.
7. 5 compounds and other strong-coupling superconductors," Phys. Rev. B, Condens. Matter, vol. 29, pp. 6165-6186, 1984.
8. S. Q. Wang, W. E. Evenson, and J. R. Schrieffer, "Theory of itinerant ferromagnets exhibiting localized-moment behavior above the Curie point," Phys. Rev. Lett., vol. 23, pp. 92-95, 1969.
9. A. J. Leggett, S Chakravarty, A. T. Dorsey, M. P. A. Fisher, A. Garg, and W. Zwerger, "Dynamics of the dissipative two-state system," Rev. Mod. Phys., vol. 59, pp. 1-85, 1987.
10. P. W. Anderson and G. Yuval, "Exact results in the Kondo problem: Equivalence to a classical one-dimensional Coulomb case," Phys. Rev. Lett., vol. 23, pp. 89-92, 1969.
11. N. Andrei, K. Furuya, and J. H. Lowenstein, "Solution of the Kondo problem," Rev. Mod. Phys., vol. 55, pp. 331-402, 1983.
12. M. J. Uren, D. J. Day, and M. J. Kirton, "1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 47, pp. 1195-1197, 1985.
13. 2 interface," Phys. Rev. Lett., vol. 71, pp. 4230-4234, 1993.
14. P. W. Anderson, O. Yuval, and D. R. Hamann, "Exact results in the Kondo problem. II. Scaling theory, qualitatively correct solution, and some new results on one-dimensional classical statistical models," Phys. Rev. B, Condens. Matter, vol. 1, pp. 4464-4473, 1970.