Post etch cleaning of low-k dielectric materials for advanced interconnects: Characterization and process optimization

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 415-418

  Louis, D ^a   Lajoinie, E ^b   Pires, F ^b   Lee, W M ^c   Holmes, D ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (Italy)

^c EKC Technology Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ETCHING; HYDROGEN; NITROGEN; PHOTORESISTS; PLASMA APPLICATIONS; PLASMAS; POLYMERS;

ADVANCED INTERCONNECTS;

CLEANING;

EID: 12844287793     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00096-3     Document Type: Article

References (4)

1. J. Parasczak, D. Edelstein, S. Cohen, E. Babich and J. Hummel : IEDM 1993, p. 261-264.
2. R. K. Laxman : Semiconductor International (May 1995), p. 71-74.
3. M. Telford : European Semiconductor, (Sep. 1997) p. 11-12.
4. F. Pires, P. Noel, C. Lecornec, G. Passemard, D. Louis, E. Lajoinie : MAM 1997, p. 68.