Ultrasharp diamond-coated silicon tips for scanning-probe devices

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 499-502

  Givargizov, E I ^a   Stepanova, A N ^a   Mashkova, E S ^b   Molchanov, V A ^b   Shi, F ^c   Hudek, P ^c   Rangelow, I W ^c  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIAMONDS; FABRICATION; SEMICONDUCTING SILICON; TECHNOLOGY;

SCANNING-PROBE DEVICES;

PROBES;

EID: 12844287168     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00116-6     Document Type: Article

References (9)

1. M. Tortonese et al. IEEE, Pennington, NJ, 1991 N0.91CH2817-5, p. 488.
2. I. W. Rangelow, S. Skocki, and P. Dumania, Microelectronic Engineering, 23 (1994) 365.
3. I. W. Rangelow "Deep etching of'Silicon" ISBN 83-7085-254-8 (1996).
4. R. S. Wagner and W. C. Ellis, Appl. Phys Lett, 4, (1964).
5. E. I. Givargizov, J. Vac. Sci. Technol. B11 (1993) 449.
6. E. I. Givargizov et al., Appl. Surf. Sci. 67 (1993) 73.
7. E. I. Givargizov et al., Mater. Lett. 18 (1993) 61.
8. F.C. Hong, G.T. Liang, J.J. Wu, D. Chang and J.C. Hsieh, Appl. Phys. Lett., 63 (1993) 5060.
9. E. S. Mashkova et al., Physics, Chemistry, and Mechanics of Surfaces (to be published).