Two causes of source/drain series resistance in bottom-contact pentacene thin-film transistors

Materials Research Society Symposium Proceedings

Volumn 814, Issue , 2004, Pages 85-90

  Noda, Makoto ^a   Yoneya, Nobuhide ^a   Hirai, Nobukazu ^a   Kawashima, Noriyuki ^a   Nomoto, Kazumasa ^a   Wada, Masaru ^a   Kasahara, Jiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATION; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; GOLD; SELF ASSEMBLY; SILICA; SPIN COATING; THERMAL EFFECTS;

BOTTOM-CONTACT (BC) PENTACENE; FIELD-EFFECT MOBILITY; ORGANIC MATERIALS; SOURCE/DRAIN (S/D) SERIES RESISTANCE;

THIN FILM TRANSISTORS;

EID: 12844282209     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-814-i4.4     Document Type: Conference Paper

References (2)

1. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electronics 47 2003 259-262.
2. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE transactions on Electron Devices, Vol. 48, No. 6, June 2001.