Advanced ArF excimer laser for 193 nm lithography

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 75-78

  Lindner, R ^a   Stamm, U ^a   Patzel R ^a   Basting, D ^a  

^a Lambda Physik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAS LASERS; LITHOGRAPHY; OPTICS; SEMICONDUCTOR DEVICE MANUFACTURE;

PRECISE DOSE CONTROL;

EXCIMER LASERS;

EID: 12844272461     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00016-1     Document Type: Article

References (3)

1. T. Saito, S. Ito, A. Tada, "Long lifetime operation of an ArF-excimer laser", Appl. Phys. B 63, pp. 229-235, 1996.
2. R. Schenker, F. Piao, W. Oldham, "193nm-induced compaction in fused silica", Second International Symposium on 193 nm Lithography, July 30-August 2, 1996, Colorado Springs, Colorado, USA.
3. D.J. Elliot, J.C. Camp, W.C. Harlow, V. Dosoretz, D. Behr, G.P. Callahan, "UV and gas interactions in an enclosed 193nm beam line", Second International Symposium on 193 nm Lithography, July 30-August 2, 1996, Colorado Springs, Colorado, USA.