Hydrogen in ultralow temperature SiO2 for nanocrystalline silicon thin film transistors

Materials Research Society Symposium Proceedings

Volumn 814, Issue , 2004, Pages 265-270

  Kattamis, Alex ^a   Cheng, I Chun ^a   Allen, Steve ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC LOSSES; HYDROGEN; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CHARGE TRAPPING; DEPOSITION TEMPERATURE; DILUTION; GATE LEAKAGE;

NANOSTRUCTURED MATERIALS;

EID: 12844269221     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-814-i10.14     Document Type: Conference Paper

References (7)

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2. I.-C. Cheng and S. Wagner, ECS Proc. 2002-23, 33-41 (2002).
3. I.-C. Cheng, S. Allen, S. Wagner, Mat. Res. Soc. Symp. Proc. 769, H6.8.1 (2003).
4. S. C. Allen, Masters Thesis. Princeton Univ., Dept. of Electrical Eng. (2003).
5. A. A. Bright, J. Vac. Sci. Technol. A 9, 1088 (1991).
6. Y. C. Park, N. M. Johnson, W. B. Jackson, K. S. Stevens, D. L. Smith, and S. B. Hagstrom, Appl. Phys. Lett. 60, 695 (1992).
7. I.-C. Cheng, S. Wagner, ECS Proc. 2002-23, 33-41 (2002).