Performing selective etch of Si3N4 and SiO 2 using a single-wafer wet-etch technology

MICRO

Volumn 23, Issue 1, 2005, Pages 47-52

  Knotter, D Martin ^a   Stewart, Nigel ^b,c   Sharp, Ian ^b   Scranton, Dana ^b,d  

^a NXP SEMICONDUCTORS   (Netherlands)

^b Semitool ^*  (United Kingdom)

^c Semitool Europe   (United Kingdom)

^d Semitool   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATH LOADING; GATE SPACERS; HYDROFLUORIC ACID (HF) PROCESSING; SINGLE-WAFER WET-ETCH TECHNOLOGY;

HYDROFLUORIC ACID; KINETIC THEORY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON NITRIDE; WETTING; WSI CIRCUITS;

SEMICONDUCTOR MATERIALS;

EID: 12844264093     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (4)

1. 2 Composites in HF/Glycerol Mixtures," Journal of the Electrochemical Society 127, no. 11 (1980): 2433-2438.
2. 2 Utilizing HF Dilution and Temperature Dependence," in Semiconductor Silicon 1973, ed. HR Huff and RR Burgess (Pennington, NJ: Electrochemical Society, 1973), 354.
3. W van Gelder and VE Hauser, "The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask," Journal of the Electrochemical Society 114, no. 8 (1967): 869-872.
4. DM Knotter and TJJ Denteneer, "Etching Mechanism of Silicon Nitride in HF-Based Solutions," Journal of the Electrochemical Society 148, no. 3 (2001): F43-F46.