Nanofabrication aspects of silicon-based spin quantum gates

IEEE Transactions on Nanotechnology

Volumn 4, Issue 1, 2005, Pages 113-115

  Koiller, Belita ^a   Hu, Xuedong ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; HAMILTONIANS; NANOTECHNOLOGY; PERMITTIVITY; PERTURBATION TECHNIQUES; SEMICONDUCTOR DOPING; SILICON; SOLID STATE DEVICES;

ELECTRON DONORS; OSCILLATORY BEHAVIOR; QUANTUM COMPUTER (QC); SPIN QUANTUM GATES;

GATES (TRANSISTOR);

EID: 12844258944     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.840166     Document Type: Conference Paper

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