Reduced pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 147-152

  Hartmann, J M ^a   Papon, A M ^a   Holliger, P ^a   Rolland, G ^a   Billon, T ^a   Rouviere M ^b,c   Vivien, L ^b   Laval, S ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; NUCLEATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; OPTICAL TELECOMMUNICATION BANDS; SUB-MICRON LITHOGRAPHY; TENSILE-STRAIN CONFIGURATION;

GERMANIUM;

EID: 12744265231     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b4.3     Document Type: Conference Paper

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