Development of thick back illuminated CCD to improve quantum efficiency in optical longer wavelength using high resistivity n-type silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5499, Issue , 2004, Pages 210-218

  Kamata, Yukiko ^a   Miyazaki, Satoshi ^a   Muramatsu, Masaharu ^b   Suzuki, Hisanori ^b   Miyaguchi, Kazuhisa ^b   Tsuru, Takeshi Go ^c   Takagi, Shin Ichiro ^c   Miyata, Emi ^d  

^a NATIONAL ASTRONOMICAL OBSERVATORY OF JAPAN   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Astronomy; CCD

Indexed keywords

AMPLIFIERS (ELECTRONIC); ASTRONOMY; ELECTRIC CONDUCTIVITY; ILLUMINATING ENGINEERING; PHOTONS; QUANTUM EFFICIENCY; SENSITIVITY ANALYSIS; SILICON; SILICON WAFERS;

BACKSIDE ILLUMINATED CCD (BICCD); BULK SILICON; CHARGE TRANSFER EFFICIENCY (CTE); DEPLETION LAYERS;

CHARGE COUPLED DEVICES;

EID: 12744261754     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.552515     Document Type: Conference Paper

References (8)

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2. A. Dey et al. "Red Hot CCDs at KPNO", NOAO Newsletter 65, pp.37, 2001
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7. H. Nakaya et al. submitted to PASP
8. D. E. Groom, "Recent progress on CCDs for astronomical imaging", SPIE, 4008, pp.634-645, 2000