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Volumn 47, Issue 11, 2004, Pages 110-122

A high efficiency class-f power amplifier design technique

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CIRCUIT CONSTRUCTION; DRAIN BIAS VOLTAGE; FREQUENCY RANGES;

EID: 12744253039     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review
Times cited : (9)

References (20)
  • 1
    • 0031270549 scopus 로고    scopus 로고
    • Class-F power amplifiers with maximally flat waveforms
    • November
    • F.H. Raad, "Class-F Power Amplifiers with Maximally Flat Waveforms," IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No. 11, November 1997, pp. 2007-2012.
    • (1997) IEEE Transactions on Microwave Theory and Techniques , vol.45 , Issue.11 , pp. 2007-2012
    • Raad, F.H.1
  • 2
    • 0027641763 scopus 로고
    • High efficient class-F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz
    • August
    • C. Duvanaud, S. Dietsche, G. Pataut and J. Obregon, "High Efficient Class-F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz," IEEE Microwave and Guided Wave Letters, Vol. 3, No. 8, August 1993, pp. 268-270.
    • (1993) IEEE Microwave and Guided Wave Letters , vol.3 , Issue.8 , pp. 268-270
    • Duvanaud, C.1    Dietsche, S.2    Pataut, G.3    Obregon, J.4
  • 4
    • 0020846476 scopus 로고
    • GaAs FET power amplifier module with high efficiency
    • November
    • K. Chiba and N. Kanmuri, "GaAs FET Power Amplifier Module with High Efficiency," Electronics Letters, Vol. 19, No. 24. November 1983, pp. 1025-1026.
    • (1983) Electronics Letters , vol.19 , Issue.24 , pp. 1025-1026
    • Chiba, K.1    Kanmuri, N.2
  • 6
    • 0027277189 scopus 로고
    • High efficiency single and push-pull power amplifiers
    • June
    • S. Toyoda, "High Efficiency Single and Push-pull Power Amplifiers,"IEEE MTT-S International Microwave Symposium Digest, Vol. 1, June 1993, pp. 277-280.
    • (1993) IEEE MTT-S International Microwave Symposium Digest , vol.1 , pp. 277-280
    • Toyoda, S.1
  • 7
    • 0023647194 scopus 로고
    • High efficiency quasimicrowave GaAs FET power amplifier
    • May
    • T. Nojima, S. Nishiki and K. Chiba, "High Efficiency Quasimicrowave GaAs FET Power Amplifier." Electronic Letters, Vol. 23, No. 10. May 1987, pp. 512-513.
    • (1987) Electronic Letters , vol.23 , Issue.10 , pp. 512-513
    • Nojima, T.1    Nishiki, S.2    Chiba, K.3
  • 8
    • 0023252935 scopus 로고
    • Harmonic reaction amplifier - A novel high efficiency and high power microwave amplifier
    • June
    • S. Nishiki and T. Nojima, "Harmonic Reaction Amplifier - A Novel High Efficiency and High Power Microwave Amplifier," IEEE MTT-S International Microwave Symposium Digest, Vol. 2, June 1987, pp. 963-966.
    • (1987) IEEE MTT-S International Microwave Symposium Digest , vol.2 , pp. 963-966
    • Nishiki, S.1    Nojima, T.2
  • 10
    • 0031164384 scopus 로고    scopus 로고
    • Considerations for high efficiency operation of microwave transistor power amplifiers
    • June
    • Y. Takayama, "Considerations for High Efficiency Operation of Microwave Transistor Power Amplifiers," IEICE Transactions on Electronics, Vol. E80-C, No. 6, June 1997, pp. 726-733.
    • (1997) IEICE Transactions on Electronics , vol.E80-C , Issue.6 , pp. 726-733
    • Takayama, Y.1
  • 11
  • 13
    • 84939356269 scopus 로고
    • A new criterion for linear two-port stability using a single geometrically derived parameter
    • December
    • M.L. Edwards and J.H. Sinsky, "A New Criterion for Linear Two-port Stability Using a Single Geometrically Derived Parameter," IEEE Transactions on Microwave Theory and Techniques, Vol. 40, No. 12, December 1992, pp. 2303-2311.
    • (1992) IEEE Transactions on Microwave Theory and Techniques , vol.40 , Issue.12 , pp. 2303-2311
    • Edwards, M.L.1    Sinsky, J.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.