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Volumn 811, Issue , 2004, Pages
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Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE;
CMOS INTEGRATED CIRCUITS;
ELECTRIC BREAKDOWN;
ELECTRON ENERGY LEVELS;
HAFNIUM COMPOUNDS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOS DEVICES;
MOSFET DEVICES;
NANOSTRUCTURED MATERIALS;
OZONE;
PERMITTIVITY;
RAPID THERMAL ANNEALING;
SELF ASSEMBLY;
SPUTTER DEPOSITION;
THIN FILMS;
TRANSISTORS;
ATOMIC LAYER DEPOSITION (ALD);
DIELECTRIC BREAKDOWN;
DIELECTRIC LAYERS;
EIREV;
ELECTRONIC POLARIZATION;
GATE DIELECTRICS;
GATE LEAKAGE CURRENTS;
ORGANIC FILMS;
STERIC EFFECTS;
TUNNELING CURRENTS;
DIELECTRIC MATERIALS;
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EID: 12744251599
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
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Times cited : (2)
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References (0)
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