Electronic structure and magnetism of FeGe with B20-type structure

Physica B: Condensed Matter

Volumn 329-333, Issue II, 2003, Pages 1131-1133

  Yamada, H ^a   Terao, K ^a   Ohta, H ^b   Kulatov, E ^c  

^a SHINSHU UNIVERSITY   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

FeGe; Field induced metamagnetic transition; Narrow gap semiconductor

Indexed keywords

CALCULATIONS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETISM; METAMAGNETISM;

BAND CALCULATIONS; FEGE; FIELD INDUCED METAMAGNETIC TRANSITIONS; NARROW-GAP SEMICONDUCTORS;

IRON COMPOUNDS;

EID: 12544259560     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)02471-7     Document Type: Conference Paper

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