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Microelectronic Engineering

Volumn 77, Issue 2, 2005, Pages 125-131

Structural, electrical and mechanical properties of templated silsesquioxane porous films

(5) Yu, Suzhu a Wong, Terence K S b Hu, Xiao b Wei, Jun a Yong, Ming Shyan a

a SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Conduction mechanism; Low k films; Nanoindentation; Porous materials

Indexed keywords

CURRENT DENSITY; ELASTIC MODULI; HARDNESS; INDENTATION; LEAKAGE CURRENTS; NANOTECHNOLOGY; POROUS MATERIALS; SYNTHESIS (CHEMICAL);

CONDUCTION MECHANISM; INTERLAYER DIELECTRICS (ILD); LOW-K FILMS; NANOINDENTATION;

DIELECTRIC FILMS;

EID: 12444303225 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2004.09.008 Document Type: Article

Times cited : (7)

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