Pulsed laser deposited SrBi2Nb2O9 thin films grown on various substrates compatible with microwaves applications

Annalen der Physik (Leipzig)

Volumn 13, Issue 1-2, 2004, Pages 55-56

  Rousseau, A ^a   Duclere J R ^a,b   Guilloux Viry, M ^a   Bouquet, V ^a   Perrin, A ^a  

^a Ecole de Chimie de Rennes   (France)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Epitaxy; SrBi2Nb2O9; Thin films

Indexed keywords

CORRELATION METHODS; DIFFRACTOMETERS; EPITAXIAL GROWTH; FATIGUE OF MATERIALS; MICROSTRUCTURE; MICROWAVE DEVICES; POLARIZATION; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

MICROWAVE APPLICATIONS; SRBI2NB2O9;

PULSED LASER DEPOSITION;

EID: 1242329375     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/andp.200310044     Document Type: Conference Paper

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