Impact ionization processes in quantum well infrared photodetector structures

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 219-223

  Gendron, L ^a   Berger, V ^b   Vinter, B ^a   Costard, E ^a   Carras, M ^a   Nedelcu, A ^a   Bois, P ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT; QUANTUM WELL INFRARED PHOTODETECTOR;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; IMPACT IONIZATION; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

PHOTODETECTORS;

EID: 1242310581     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/016     Document Type: Article

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