Recent radiation effects activities at JPL: Coping with COTS

European Space Agency, (Special Publication) ESA SP

Volumn , Issue 395, 1997, Pages 227-244

  Barnes, C ^a   Johnston, A ^a   Lee, C ^a   Swift, G ^a   Rax, B ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1242287203     PISSN: 03796566     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (31)

1. 2)/s: implications for hardness assurance", IEEE Trans. Nuc. Sci. NS-41, 2637 (1994).
2. S. McClure, R. Pease, W. Will and G. Perry, "Dependence of total dose response of bipolar linear microcircuits on applied dose rate", IEEE Trans. Nuc. Sci. NS-41, 2544 (1994).
3. D. Fleetwood, S. Kosier, R. Nowlin, R. Schrimpf, R. Reber, Jr., M. DeLaus, P. Winokur, A. Wei, W. Combs and R. Pease, "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates", IEEE Trans. Nuc. Sci. NS-41, 1871 (1994).
4. A. Johnston, G. Swift and B. Rax, "Total dose effects in conventional bipolar transistors and integrated circuits", IEEE Trans. Nuc. Sci. NS-41, 2452 (1994).
5. D. Schmidt, R. Graves, R. Schrimpf, D. Fleetwood, R. Nowlin and W. Combs, "Comparison of ionizing radiation induced gain degradation in lateral, substrate, and vertical PNP BJTs", IEEE Trans. Nuc. Sci. NS-42, 1541 (1995).
6. A. Johnston, B. Rax and C. Lee, "Enhanced damage in linear bipolar integrated circuits at low dose rate", IEEE Trans. Nuc. Sci. NS-42, 1650 (1995).
7. R. Schrimpf, R. Graves, D. Schmidt, D. Fleetwood, R. Pease, W. Combs, and M. DeLaus, "Hardness assurance issues for lateral PNP bipolar junction transistors", IEEE Trans. Nuc. Sci. NS-42, 1641 (1995).
8. A. Johnston, C. Lee, B. Rax and D. Shaw, "Using commercial semiconductor technologies in space", p. 175 in Proc. of Third European Conf. On Radiation and Its Effects on Components and Systems (RADECS 95) (1995).
9. R. Schrimpf, "Recent advances in understanding total dose effects in bipolar transistors", p. 9 in Proc. of Third European Conf. On Radiation and Its Effects on Components and Systems (RADECS 95) (1995).
10. J. Bosc, G. Sarrabayrouse and F. Guerre, "Total dose effects on elementary transistors of a comparator in bipolar technology", p. 223 in Proc. of Third European Conf. On Radiation and Its Effects on Components and Systems (RADECS 95), Arcachon, France, September, 1995.
11. See, for example, G. Watkins, "Radiation effects in semiconductors", Plenum Press, New York, NY (1968).
12. B. Rax, C. Lee, A. Johnston and C. Barnes, "Total dose and proton damage in optocouplers", IEEE Trans. Nuc. Sci. NS-43, 3167 (1996).
13. G. Swift, L. Smith and H. Schafzahl, "Single event functionality interrupt: a new failure mode for semiconductor memories", presented at the 9th Single Event Effects Symposium, Manhattan Beach, CA, April, 1994.
14. R. Koga, W. Grain, K. Crawford, D. Lau, S. Pinkerton, B. Yi and R. Chitty, "On the suitability of non-hardened high density SRAMs for space", IEEE Trans. Nuc. Sci. NS-38, 1507 (1991).
15. C. Dufour, P. Garnier, T. Carriere, J. Beaucour, R. Ecoffet and M. Labrunee, "Heavy ion induced single hard errors on submicronic memories", IEEE Trans. Nuc. Sci. NS-39, 1693 (1992).
16. T. Oldham, K. Bennett, J. Beaucour, T. Carriere, C. Polvey and P. Garnier, "Total dose failures in advanced electronics from single ions", IEEE Trans. Nuc. Sci. NS-40, 1820 (1993).
17. S. Duzellier, D. Falguere and R. Ecoffet, "Protons and heavy ions induced stuck bits on large capacity RAMs", p. 468 in Proc. of Second European Conf. On Radiation and Its Effects on Components and Systems (RADECS 93) (1994).
18. G. Swift, D. Padgett and A. Johnston, "Anew class of single event hard errors", IEEE Trans. Nuc. Sci. NS-41, 2043 (1994).
19. D. Shaw, G. Swift, D. Padgett and A. Johnston, "Radiation effects in five volt and advanced lower voltage DRAMs", IEEE Trans. Nuc. Sci. NS-41, 2452 (1994).
20. P. Calvel, P. Lamothe, C. Barillot, R. Ecoffet, S. Duzellier and E. Stassinopoulos, "Space radiation evaluation of 16 Mbit DRAMs for mass memory applications", IEEE Trans. Nuc. Sci. NS-41, 2267 (1994).
21. D. Shaw, G. Swift, D. Padgett and A. Johnston, "Radiation evaluation of an advanced 64 Mb, 3.3 V DRAM and insights into the effects of scaling on radiation hardness", IEEE Trans. Nuc. Sci. NS-42, 1674 (1995).
22. R. Harboe-Sorensen, S. Fraenkel, R. Muller and T. Braunschweig, "Heavy ion, proton and Co-60 radiation evaluation of 16 Mbit DRAM memories for space application", presented at the 32nd International Nuclear and Space Radiation Effects Conf., Madison, WI, July, 1995.
23. A. Johnston, G. Swift and D. Shaw, "Impact of CMOS scaling on single event hard errors in space systems", presented at the 1995 Symposium on Low Power Electronics, San Jose, CA, October, 1995, p. 88 in Digest of Technical Papers from 1995 SLPE Conf., October, 1995.
24. H. Joseph, "Radiation-induced effects on special superlarge n-channel power MOSFETs for space applications", p. 128 in Proc. of First European Conf. On Radiation and Its Effects on Components and Systems (RADECS 91) (1992).
25. D. Nichols, J. Coss and K. McCarty, "Single event gate rupture in commercial power MOSFETs", p. 462 in Proc. of Second European Conf. On Radiation and Its Effects on Components and Systems (RADECS 93) (1994).
26. D. Shaw, G. Swift, D. Padgett and A. Johnston, "Radiation effects in five volt and advanced lower voltage DRAMs", IEEE Trans. Nuc. Sci. NS-41, 2452 (1994).
27. R. Katz, R. Barto, P. McKerracher, B. Carkhuff and R. Koga, "SEU hardening of field programmable gate arrays (FPGAs) for space applications and device characterization", IEEE Trans. Nuc. Sci. NS-41, 2179 (1994).
28. G. Swift and R. Katz, "An experimental survey of heavy ion induced dielectric rupture", p. 425 in Proc. of Third European Conf. On Radiation and Its Effects on Components and Systems (RADECS 95) (1995).
29. H. Joseph, "Radiation-induced effects on special superlarge n-channel power MOSFETs for space applications", p. 128 in Proc. of First European Conf. On Radiation and Its Effects on Components and Systems (RADECS 91) (1992).
30. D. Nichols, J. Coss and K. McCarty, "Single event gate rupture in commercial power MOSFETs", p. 462 in Proc. of Second European Conf. On Radiation and Its Effects on Components and Systems (RADECS 93) (1994).
31. C. Lee, A. Johnston, W. Tang, C. Barnes and J. Lyke, "Total dose effects on microelectromechanical systems (MEMS): accelerometers", IEEE Trans. Nuc. Sci. NS-43, 3127 (1996).