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Handbook of Sensors and Actuators
Volumn 8, Issue , 2000, Pages 199-239
Chapter 5 Piezoresistive sensing
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EID: 1242287201     PISSN: 13862766     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S1386-2766(00)80019-5     Document Type: Chapter
Times cited : (3)
References (7)
  • 1
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • Smith C.S. Piezoresistance effect in germanium and silicon. Phys. Rev. Vol. 94 (1954) 42-49
    • (1954) Phys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 2
    • 0011712475 scopus 로고
    • Macroscopic symmetry and properties of crystals
    • Editors: F. Seitz, D. Turnbull
    • Editors: F. Seitz, D. Turnbull. Smith C.S. Macroscopic symmetry and properties of crystals. Solid State Physics, Advance in Research and Applications Vol. 6 (1958) 175-249
    • (1958) Solid State Physics, Advance in Research and Applications , vol.6 , pp. 175-249
    • Smith, C.S.1
  • 3
    • 0001477655 scopus 로고
    • Piezoresistance properties of heavily doped n-type silicon
    • Tufte O.N., and Stelzer E.L. Piezoresistance properties of heavily doped n-type silicon. Phys. Rev. Vol. 133 (1964) A1705-A1716
    • (1964) Phys. Rev. , vol.133
    • Tufte, O.N.1    Stelzer, E.L.2
  • 4
    • 0000023102 scopus 로고
    • Piezoresistance properties of silicon diffused layers
    • Tufte O.N., and Stelzer E.L. Piezoresistance properties of silicon diffused layers. Journal of Applied Physics Vol. 34 (1963) 313
    • (1963) Journal of Applied Physics , vol.34 , pp. 313
    • Tufte, O.N.1    Stelzer, E.L.2
  • 5
    • 70350328179 scopus 로고
    • A graphic representation of the piezoresistance coefficient of silicon
    • Kanda Y. A graphic representation of the piezoresistance coefficient of silicon. IEEE trans. on Electron Devices Vol. ED-29 No. 1 (1882) 64-70
    • (1882) IEEE trans. on Electron Devices , vol.ED-29 , Issue.1 , pp. 64-70
    • Kanda, Y.1
  • 6
    • 0024681777 scopus 로고
    • Geometric design rules of four-terminal gauge for pressure sensors
    • Bao M., Qi W., and Wang Y. Geometric design rules of four-terminal gauge for pressure sensors. Sensors and Actuators 18 (1989) 149-156
    • (1989) Sensors and Actuators , vol.18 , pp. 149-156
    • Bao, M.1    Qi, W.2    Wang, Y.3
  • 7
    • 0019392851 scopus 로고
    • Modeling and optimization of monolithic polycrystalline silicon resistors
    • Lu N., Gerzberg L., Lu C., and Meindl J. Modeling and optimization of monolithic polycrystalline silicon resistors. IEEE Trans. on Electron Devices Vol. ED-28 (1981) 818-830
    • (1981) IEEE Trans. on Electron Devices , vol.ED-28 , pp. 818-830
    • Lu, N.1    Gerzberg, L.2    Lu, C.3    Meindl, J.4

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.