Study of self-limiting etching behavior in wet isotropic etching of silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6939-6941

  Han, Cheol Hyun ^a   Kim, Eun Sok ^a  

^a University of Hawaii at Manoa   (United States)

Author keywords

MEMS; Self etch stop; Spherical cavity; Wet isotropic etching of silicon

Indexed keywords

EID: 1242272634     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6939     Document Type: Article

References (5)

1. H. Hashimoto, S. Tanaka, K. Sato, I. Ishikawa, S. Kato and N. Chubachi: Jpn. J. Appl. Phys. 32 (1993) 2543
2. K. K. Wise and M. G. Robinson: J. Vac. Sci. & Technol. 18 (1981) 1179
3. H. Robbins and B. Schwartz: J. Electrochem. Soc. 106 (1959) 505
4. H. Robbins and B. Schwartz: J. Electrochem. Soc. 123 (1976) 1903
5. H. Zhang and E. S. Kim: Proc. IEEE Micro Electro Mechanical Systems, Amsterdam, 1995, p. 256.