GeH 4 adsorption on Si(0 0 1) at RT: Transfer of H atoms to Si sites and atomic exchange between Si and Ge

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 179-182

  Murata, Takeshi ^a   Suemitsu, Maki ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Adsorption; CVD; Germane; Hydrogen; Infrared spectroscopy; Si(0 0 1); TPD

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS; HYDROGEN; INFRARED SPECTROSCOPY; MONOLAYERS; SURFACE PROPERTIES; TEMPERATURE PROGRAMMED DESORPTION;

ADATOMS; ATOMIC EXCHANGE;

SILICON;

EID: 1242265481     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.037     Document Type: Conference Paper

References (11)

1. Currie M.T., Leitz C.W., Langdo T.A., Taraschi G., Fitzgerald E.A. J. Vacuum Sci. Technol. B. 19:2001;2268.
2. Harame D.L., Comfort J.H., Cressler J.D., Crabbe' E.F., Sun J.Y.-C., Meyerson B.S., Tice T. IEEE Trans. Electron Devices. 42:1995;455.
3. Dentel D., Bischoff J.L., Angot T., Kubler L. Surf. Sci. 402-404:1998;211.
4. Jeong S., Oshiyama A. Surf. Sci. 436:1999;L666.
5. Angot T., Louis P. Phys. Rev. B. 61:2000;7293.
6. Ko Y.-J., Park K.-H., Ha J.S., Yun W.S. Phys. Rev. B. 60:1999;8158.
7. Kim H., Taylor N., Bramblett T.R., Greene J.E. J. Appl. Phys. 84:1998;6372. and references therein.
8. Chabal Y.J. Surf. Sci. 168:1986;594.
9. Tsukidate Y., Suemitsu M. Japan. J. Appl. Phys. 40:2001;5206.
10. Lam, Y.-J. Zheng, J.R. Engstrom, Chem. Phys. Lett. 292 (1998) 229.
11. Rudkevich E., Liu F., Savage D.E., Kuech T.F., McCaughan L., Lagally M.G. Phys. Rev. Lett. 81:1998;3467.