Annealing behavior comparison of NTD FZ (H) Si irradiated in light-water-reactor and heavy-water-reactor

Materials Science and Engineering: B

Volumn 107, Issue 2, 2004, Pages 119-123

  Li, Huaixiang ^a   Wang, Ruihua ^a   Zhang, Hua ^a   Zhao, Jing ^a   Liu, Guirong ^b   Chen, Yansheng ^b   Duan, Shuzhen ^b  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Annealing behavior; Complex donor; Micro defects; NTD silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DECOMPOSITION; DOPING (ADDITIVES); ELECTROMAGNETIC WAVE ABSORPTION; INFRARED RADIATION; INGOTS; LIGHT WATER REACTORS; PASSIVATION; PRECIPITATION (CHEMICAL); SILICON; SINGLE CRYSTALS; SOLUTIONS; SPECTRUM ANALYSIS;

COMPLEX DONORS; MICRODEFECTS; NEUTRON TRANSMUTATION DOPING (NTD) SI;

HEAVY WATER REACTORS;

EID: 1242264816     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.076     Document Type: Article

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