A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 273-282

  Wang, Yue ^a,c   Li, Quanbao ^a   Han, Qinglin ^a   Ma, Qinghua ^a   Song, Bingwen ^a   Jie, Wanqi ^b   Zhou, Yaohe ^b   Inatomi, Yuko ^c  

^a KUNMING INSTITUTE OF PHYSICS   (China)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

A1. Low temperature growth; A2. Pressurized Bridgman; A2. Two stage technique; B1. Large diameter HgCdTe

Indexed keywords

CRYSTAL STRUCTURE; INGOTS; LOW TEMPERATURE PHENOMENA; MERCURY COMPOUNDS; PRESSURIZATION; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

LARGE DIAMETER HGCDTE; LOW TEMPERATURE GROWTH; PRESSURIZED BRIDGMAN; TWO-STAGE TECHNIQUE;

CRYSTAL GROWTH;

EID: 1242263863     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.077     Document Type: Article

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