Mechanisms of preferential adsorption on the Si(1 1 1)7 × 7 surface

Surface Science

Volumn 575, Issue 3, 2005, Pages 247-259

  Vasco, E ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b EPFL   (Switzerland)

Author keywords

Adsorption kinetics; Metal clusters; Metal semiconductor interface; Monte Carlo simulations; Self assembly; Si(1 1 1)7 7; Surface diffusion; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MONTE CARLO METHODS; OPTIMIZATION; RELAXATION PROCESSES; SELF ASSEMBLY; SILICON; THERMODYNAMIC STABILITY;

ADSORPTION KINETICS; METAL CLUSTERS; METAL-SEMICONDUCTOR INTERFACES; SURFACE DIFFUSION; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

ADSORPTION;

EID: 12344338647     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.11.006     Document Type: Article

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