Temperature dependence of Dyakonov-Perel spin relaxation in zinc-blende semiconductor quantum structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-9

  Kainz, J ^a   Rossler U ^a   Winkler, R ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ZINC SULFIDE;

ARTICLE; ELECTRON; MATHEMATICAL ANALYSIS; QUANTUM MECHANICS; QUANTUM THEORY; ROOM TEMPERATURE; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 12344338150     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195322     Document Type: Article

References (47)

1. D. P. DiVincenzo, Science 270, 255 (1995).
2. G. A. Prinz, Science 282, 1660 (1998).
3. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001).
4. Semiconductor Spintronics and Quantum Computations, edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer, Berlin, 2002).
5. M. Oestreich, M. Bender, J. Hübner, D. Hägele, W. W. Rühle, T. Hartmann, P. J. Klar, W. Heimbrodt, M. Lampalzer, K. Volz, and W. Stolz, Semicond. Sci. Technol. 17, 285 (2002).
6. G. E. Pikus and A. N. Titkov, in Optical Orientation, edited by F. Meier and B. P. Zakharchenya (Elsevier, Amsterdam, 1984), Chap. 3, pp. 73-131.
7. M. I. Dyakonov and V. I. Perel, Sov. Phys. JETP 33, 1053 (1971) [Zh. Eksp. Teor. Fiz. 60, 1954 (1971)].
8. M. I. Dyakonov and V. I. Perel, Sov. Phys. JETP 33, 1053 (1971) [Zh. Eksp. Teor. Fiz. 60, 1954 (1971)].
9. M. I. Dyakonov and V. I. Perel, Sov. Phys. Solid State 13, 3023 (1972) [Fiz. Tverd. Tela (Leningrad) 13, 3581 (1971)].
10. M. I. Dyakonov and V. I. Perel, Sov. Phys. Solid State 13, 3023 (1972) [Fiz. Tverd. Tela (Leningrad) 13, 3581 (1971)].
11. M. I. Dyakonov and V. Y. Kachorovskii, Sov. Phys. Semicond. 20, 110 (1986) [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 20, 178 (1986)].
12. M. I. Dyakonov and V. Y. Kachorovskii, Sov. Phys. Semicond. 20, 110 (1986) [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 20, 178 (1986)].
13. N. S. Averkiev, L. E. Golub, and M. Willander, J. Phys.: Condens. Matter 14, R271 (2002).
14. N. S. Averkiev and L. E. Golub, Phys. Rev. B 60, 15 582 (1999).
15. J. Kainz, U. Rössler, and R. Winkler, Phys. Rev. B 68, 075322 (2003).
16. N. S. Averkiev, L. E. Golub, and M. Willander, Sov. Phys. Semicond. 36, 91 (2002) [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 36, 97 (2002)].
17. N. S. Averkiev, L. E. Golub, and M. Willander, Sov. Phys. Semicond. 36, 91 (2002) [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 36, 97 (2002)].
18. W. H. Lau, J. T. Olesberg, and M. E. Flatté, Phys. Rev. B 64, 161301(R) (2001).
19. G. L. Bir, A. G. Aronov, and G. E. Pikus, Sov. Phys. JETP 42, 705 (1976) [Zh. Eksp. Teor. Fiz. 69, 1382 (1975)].
20. G. L. Bir, A. G. Aronov, and G. E. Pikus, Sov. Phys. JETP 42, 705 (1976) [Zh. Eksp. Teor. Fiz. 69, 1382 (1975)].
21. G. Dresselhaus, Phys. Rev. 100, 580 (1955).
22. Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984).
23. J. Rudolph, D. Hägele, H. M. Gibbs, G. Kithrova, and M. Oestreich, Appl. Phys. Lett. 82, 4516 (2003).
24. R. Winkler and U. Rössler, Phys. Rev. B 48, 8918 (1993).
25. R. Terauchi, Y. Ohno, T. Adachi, A. Sato, F. Matsukara, A. Tackeuchi, and H. Ohno, Jpn. J. Appl. Phys., Part 1 38, 2549 (1999).
26. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Physica E (Amsterdam) 6, 817 (2000).
27. M. M. Glazov and E. L. Ivchenko, JETP Lett. 75, 403 (2002) [Pis'ma Zh. Eksp. Teor. Fiz. 75, 476 (2002)].
28. M. M. Glazov and E. L. Ivchenko, JETP Lett. 75, 403 (2002) [Pis'ma Zh. Eksp. Teor. Fiz. 75, 476 (2002)].
29. M. A. Brand, A. Malinowski, O. Z. Karimov, P. A. Marsden, R. T. Harley, A. J. Shields, D. Sanvitto, D. A. Ritchie, and M. Y. Simmons, Phys. Rev. Lett. 89, 236601 (2002).
30. M. Braun and U. Rössler, J. Phys. C 18, 3365 (1985).
31. M. Lundstrom, Fundamentals of Carrier Transport, 2nd ed. (Cambridge University Press, Cambridge, England, 2000).
32. 2/[ν(ν-1)].
33. J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, New York, 1993).
34. I. S. Gradshteyn and I. M. Ryzhik, Table of Integrals, Series and Products (Academic, San Francisco, 1996).
35. tr.
36. Due to different definitions of the spin-relaxation time the values given here differ from those in Ref. 20 by a factor of 2.
37. Y. Ohno (private communication, 2003).
38. M. M. Glazov, Sov. Phys. Solid State 45, 1162 (2003) [Fiz. Tverd. Tela (Leningrad) 45, 1108 (2003)].
39. M. M. Glazov, Sov. Phys. Solid State 45, 1162 (2003) [Fiz. Tverd. Tela (Leningrad) 45, 1108 (2003)].
40. M. M. Glazov, E. L. Ivchenko, M. A. Brand, O. Z. Karimov, and R. T. Harley, 11th International Symposium "Nanostructures: Physics and Technology," edited by Zh. Alferov and L. Esaki, Ioffe Physico-Technical Institute, St. Petersburg, 2003, p. 273.
41. M. Oestreich (private communication, 2004).
42. V. F. Gantmakher and Y. B. Levinson, Carrier Scattering in Metals and Semiconductors (North-Holland, Amsterdam, 1987).
43. B. K. Ridley, Quantum Processes in Semiconductors (Clarendon, Oxford, 1993).
44. R. Ferreira and G. Bastard, Phys. Rev. B 40, 1074 (1989).
45. K. Hess, Appl. Phys. Lett. 35, 484 (1979).
46. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, J. Appl. Phys. 54, 6432 (1983).
47. F. G. Pikus and G. E. Pikus, Phys. Rev. B 51, 16 928 (1995).