Excitonic effects on the silicon plasmon resonance

Physical Review Letters

Volumn 86, Issue 26 I, 2001, Pages 5962-5965

  Olevano, Valerio ^a,b   Reining, Lucia ^a  

^a LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CARRIER CONCENTRATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRANSITIONS; EXCITONS; GROUND STATE; HAMILTONIANS; PERTURBATION TECHNIQUES; POSITIVE IONS; SEMICONDUCTING SILICON;

ELECTRON-HOLE INTERACTION; INTERBAND TRANSITION; RANDOM PHASE APPROXIMATION; SILICON PLASMON RESONANCE;

ELECTRON RESONANCE;

EID: 12344329971     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.5962     Document Type: Article

References (20)