Optical and electron correlation effects in silicon quantum dots

Journal of Metastable and Nanocrystalline Materials

Volumn 23, Issue , 2005, Pages 129-132

  Ghoshal, S K ^a   Jain, K P ^b   Elliott, R J ^c  

^a GURU JAMBHESHWAR UNIVERSITY OF SCIENCE AND TECHNOLOGY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Confinement; HOMO LUMO States; Nanostructure; Passivation; Photoluminescence; Pseudo Potential; Quantum Dot; Radiative Recombination

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; FUNCTIONS; LUMINESCENCE; NANOSTRUCTURED MATERIALS; PASSIVATION; POLYSILANES; QUANTUM THEORY; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

BAND GAPS; DANGLING BONDS; HYBRIDIZATION; SURFACE PASSIVATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 12344306060     PISSN: 14226375     EISSN: None     Source Type: Journal    
DOI: 10.4028/www.scientific.net/JMNM.23.129     Document Type: Conference Paper

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