Characterization of epitaxially grown YBa2Cu3O7-δ thin films produced using pulsed ion-beam evaporation

IEEE Transactions on Plasma Science

Volumn 30, Issue 5 I, 2002, Pages 1848-1851

  Suematsu, Hisayuki ^a   Yoshida, Goro ^b   Sorasit, Suntharow ^c   Suzuki, Tsuneo ^a   Jiang, Weihua ^a   Yatsui, Kiyoshi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Epitaxial; Ion beam evaporation; Superconductors; Thin films; Y 123

Indexed keywords

ABLATION; ANNEALING; DEPOSITION; EPITAXIAL GROWTH; EVAPORATION; ION BEAMS; ION BOMBARDMENT; SINGLE CRYSTALS; STOICHIOMETRY; STRONTIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HIGH SPEED PHOTOGRAPHS; PULSED ION BEAM EVAPORATION; PULSED ION BEAM GENERATOR;

YTTRIUM BARIUM COPPER OXIDES;

EID: 12244310504     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2002.805328     Document Type: Article

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