The Effects of Unsymmetric Matrix Permutations and Scalings in Semiconductor Device and Circuit Simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 23, Issue 3, 2004, Pages 400-411

  Schenk, Olaf ^a,b   Röllin, Stefan ^c   Gupta, Anshul ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF BASEL   (Switzerland)

^c ETH ZURICH   (Switzerland)

Author keywords

Circuit simulation; Numerical linear algebra; Preconditioning; Semiconductor device simulation; Sparse linear solvers; Sparse unsymmetric matrices

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTROSTATICS; FINITE ELEMENT METHOD; ITERATIVE METHODS; LINEAR SYSTEMS; NONLINEAR EQUATIONS; PARTIAL DIFFERENTIAL EQUATIONS;

CIRCUIT SIMULATION; NUMERICAL LINEAR ALGEBRA; PRECONDITIONING; SEMICONDUCTOR DEVICE SIMULATION; SPARSE LINEAR SOLVERS; SPARSE UNSYMMETRIC MATRICES;

SEMICONDUCTOR DEVICES;

EID: 12144289985     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2004.823345     Document Type: Article

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