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Volumn 5448, Issue PART 2, 2004, Pages 935-943

Study of laser die release by Q-switched Nd: YAG laser pulses

Author keywords

Laser transfer; Microelectronics assembly

Indexed keywords

INTEGRATED CIRCUITS; LASER BEAM EFFECTS; LASER BEAMS; MICROELECTRONICS; MONOMERS; PLASMA SIMULATION; POLYMERIZATION; POLYVINYL CHLORIDES; Q SWITCHED LASERS; SEMICONDUCTOR MATERIALS;

EID: 12144284638     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546674     Document Type: Conference Paper
Times cited : (18)

References (10)
  • 2
    • 0032304202 scopus 로고    scopus 로고
    • Sacrificial layer process with laser-driven release for batch assembly operations
    • A.S. Holmes, S.M. Saidam, "Sacrificial layer process with laser-driven release for batch assembly operations", J. Microelectromechanical Systems 7(4), 416-422, 1998.
    • (1998) J. Microelectromechanical Systems , vol.7 , Issue.4 , pp. 416-422
    • Holmes, A.S.1    Saidam, S.M.2
  • 4
    • 0020113278 scopus 로고
    • Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond pulses
    • A. Lietoila, J.F. Gibbons, "Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond pulses", J. Appl. Phys. 53 (4), 3207-3213, 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.4 , pp. 3207-3213
    • Lietoila, A.1    Gibbons, J.F.2
  • 5
    • 0037905136 scopus 로고
    • Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1,06 μm
    • K.G. Svantesson, N.G. Nisson, "Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1,06 μm", J. Phys. C: Solid State Phys., Vol.12, 3837-3842, 1979.
    • (1979) J. Phys. C: Solid State Phys. , vol.12 , pp. 3837-3842
    • Svantesson, K.G.1    Nisson, N.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.