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Volumn 38, Issue 1, 2005, Pages 156-171

Simulation of the effects of the dose rate and temperature on zircon thermoluminescence

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURVE FITTING; ELECTRON ENERGY LEVELS; HIGH TEMPERATURE EFFECTS; IONIZATION OF SOLIDS; IRRADIATION; MATHEMATICAL MODELS;

EID: 12144252952     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/1/024     Document Type: Article
Times cited : (5)

References (17)
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    • 0346675506 scopus 로고
    • Radiation damage and the anomalous fading of TL in natural and artificial zircons
    • Durrani S A and Amin Y M 1985 Radiation damage and the anomalous fading of TL in natural and artificial zircons Nucl. Tracks Radiat. Meas. 10 539-46
    • (1985) Nucl. Tracks Radiat. Meas. , vol.10 , pp. 539-546
    • Durrani, S.A.1    Amin, Y.M.2
  • 3
    • 0022885384 scopus 로고
    • Auto-regenerative TL dating of zircon inclusions
    • Templer R H 1986 Auto-regenerative TL dating of zircon inclusions Radiat. Prot. Dosim. 17 235-39
    • (1986) Radiat. Prot. Dosim. , vol.17 , pp. 235-239
    • Templer, R.H.1
  • 7
  • 10
    • 0019286467 scopus 로고
    • Trapping and emission centers in x-irradiated zircon: III. Influence of trivalent rare-earth impurities
    • Iacconi P and Caruba R 1980 Trapping and emission centers in x-irradiated zircon: III. Influence of trivalent rare-earth impurities Phys. Status Solidi a 62 589-96
    • (1980) Phys. Status Solidi A , vol.62 , pp. 589-596
    • Iacconi, P.1    Caruba, R.2
  • 12
    • 36849112146 scopus 로고
    • Bandgap dependence and related features of radiation ionisation energies in semiconductors
    • Klein C A 1968 Bandgap dependence and related features of radiation ionisation energies in semiconductors J. Appl. Phys. 39 2029-38
    • (1968) J. Appl. Phys. , vol.39 , pp. 2029-2038
    • Klein, C.A.1
  • 13
    • 0001332240 scopus 로고
    • Electron-hole pair creation energies in semiconductors
    • Alig R C and Bloom S 1975 Electron-hole pair creation energies in semiconductors Phys. Rev. Lett. 35 1522-5
    • (1975) Phys. Rev. Lett. , vol.35 , pp. 1522-1525
    • Alig, R.C.1    Bloom, S.2
  • 14
    • 0035423543 scopus 로고    scopus 로고
    • First principles investigation of scaling trends of zirconium silicate interface band offsets
    • Kawamoto A, Cho K, Griffin P and Dutton R 2001 First principles investigation of scaling trends of zirconium silicate interface band offsets J. Appl. Phys. 90 1333-41
    • (2001) J. Appl. Phys. , vol.90 , pp. 1333-1341
    • Kawamoto, A.1    Cho, K.2    Griffin, P.3    Dutton, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.