Photoemission spectra and structures of Si clusters at finite temperature

Physical Review Letters

Volumn 75, Issue 3, 1995, Pages 493-496

  Binggeli, N ^a   Chelikowsky, James R ^b  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; MOLECULAR DYNAMICS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; RELAXATION PROCESSES; ULTRAVIOLET SPECTROSCOPY;

ATOMIC RELAXATION; CHARGED CLUSTERS; FINITE TEMPERATURE; ISOMERS; LOCAL DENSITY FUNCTIONAL METHOD; MOLECULAR ORBITALS;

SEMICONDUCTING SILICON;

EID: 11944270688     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.75.493     Document Type: Article

References (26)

1. Microclusters,
2. Theoretical study of small silicon clusters: Equilibrium geometries and electronic structures of Sin (n=2–7,10)
3. Theoretical studies on silicon clusters
4. Calculation of Magic Numbers and the Stability of Small Si Clusters