Summary of ISO/TC 201 Standard: X ISO 17560:2002 - Surface chemical analysis - Secondary ion mass spectrometry-Method for depth profiling of boron in silicon

Surface and Interface Analysis

Volumn 37, Issue 1, 2005, Pages 90-91

  Homma, Y ^a,b  

^a Bio Medical Informatics Research Center   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Boron; Depth profiling; Secondary ion mass spectrometry; Silicon; SIMS

Indexed keywords

AMORPHOUS SILICON; BORON; CALIBRATION; INTERFEROMETRY; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SPUTTERING;

DEPTH PROFILING; INTERFERENCE FRINGES; OPTICAL INTERFEROMETRY; RELATIVE SENSITIVITY FACTORS (RSF);

SURFACE CHEMISTRY;

EID: 11844293458     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1994     Document Type: Article

References (4)

1. ISO 14237:2000 Surface chemical analysis-Secondary ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials. ISO: Geneva, 2000.
2. Homma Y. Surf. Interface Anal. 2002; 33: 361.
3. Okamoto Y, Homma Y, Hayashi S, Toujou F, Isomura N, Mikami A, Nomachi I, Seo S, Tomita M, Yamamoto A, Ichikawa S, Kawashima Y, Mimori R, Mitsuoka Y, Tachikawa I, Toyoda T, Ueki Y. In Secondary Ion Mass Spectrometry SIMS XI, Benninghoven A, Gillen G, Lareau R, Bennett J, Stevie F (eds). John Wiley: Chichester, 1998; 1047.
4. Toujou F, Tomita M, Takano A, Okamoto Y, Hayashi S, Yamamoto A, Homma Y. In Secondary Ion Mass Spectrometry SIMS XII, Benninghoven A, Bertrand P, Migeon HN, Werner HW (eds). Elsevier: Amsterdam, 2000; 101.