Evaluation, reduction and monitoring of progressive defects on 193nm reticles for low-k1 process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 1, 2004, Pages 225-230

  Shiao, Chia Hwa ^a   Tsai, Chien Chung ^a   Hsu, Tony ^b   Tuan, Steve ^b   Chang, Doris ^b   Chen, Richard ^b   Hsieh, Frank ^b  

^a WINBOND ELECTRONICS CORPORATION   (Taiwan)

^b Toppan Chunghwa Electronics Co Ltd   (Taiwan)

Author keywords

Contamination; Crystal growth; Haze; Inspection; Mask cleaning process; Precipitates; Progressive defects

Indexed keywords

ETHYLHEXYL ALCOHOL (EHA); HAZE; MASK CLEANING PROCESS; PROGRESSIVE DEFECTS;

CHEMICAL ANALYSIS; CONTAMINATION; CRYSTAL GROWTH; ELECTRON BEAMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS CHROMATOGRAPHY; INSPECTION; MASKS; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; SOLUBILITY;

PHOTOLITHOGRAPHY;

EID: 11844285718     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557702     Document Type: Conference Paper

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