The effect of metallization induced defects on metal-semiconductor contacts

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 391-396

  Goodman, S A ^a   Auret, F D ^a   Myburg, G ^a   Schutte, C ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DEPOSITION; DETERIORATION; SEMICONDUCTOR DEVICE MANUFACTURE;

CAPACITANCE VOLTAGE MEASUREMENTS; DEFECT CONCENTRATIONS; DEPOSITION OF METALS; DEPOSITION TECHNIQUE; FREE CARRIER DENSITY; IV CHARACTERISTICS; METAL-SEMICONDUCTOR CONTACTS; SEMI-CONDUCTOR SURFACES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 11744300100     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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