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Volumn 6, Issue 3, 1996, Pages 403-412

Possible generation of transient THz electronic drift effects in a semiconductor by a high electric field

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[No Author keywords available]

Indexed keywords


EID: 11744278448     PISSN: 11554304     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp1:1996165     Document Type: Article
Times cited : (1)

References (14)
  • 1
    • 0022328010 scopus 로고
    • Hot-Electron Transport in Semiconductors, L. Reggiani Ed. Springer, Berlin
    • Constant E., in Hot-Electron Transport in Semiconductors, Topics in Applied Physics, Vol. 58, L. Reggiani Ed. (Springer, Berlin, 1985) p. 227.
    • (1985) Topics in Applied Physics , vol.58 , pp. 227
    • Constant, E.1
  • 10
    • 0022328011 scopus 로고
    • Hot-Electron Transport in Semiconductors, L. Reggiani Ed. Springer, Berlin
    • Reggiani L., in Hot-Electron Transport in Semiconductors, Topics in Applied Physics, Vol. 58, L. Reggiani Ed. (Springer, Berlin, 1985) p.7.
    • (1985) Topics in Applied Physics , vol.58 , pp. 7
    • Reggiani, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.