Scanning tunneling microscopy study of reconstruction of 0.8 monolayers Ga on an Si (001) surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 645-650

  Nakada, Yoshinobu ^a   Okumura, Hajime ^b,c  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744273403     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589874     Document Type: Article

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