Valence-band offset at the Si/GaP (110) interface

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 75-77

  Lazzouni, M E ^a   Peressi, M ^b   Baldereschi, A ^b,c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF TRIESTE   (Italy)

^c INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744260178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116762     Document Type: Article

References (16)

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10. See, for example, R. M. Martin, in Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter, edited by J. T. Devreese and P. Van Camp (Plenum, New York, 1985), p. 175.
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13. The pseudopotentials used here have been generated using a scheme originally proposed by R. Car and U. Von Barth (unpublished).
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15. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology (Springer, New York, 1982), Group III, Vol. 17 a-b.
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