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Nuclear Inst. and Methods in Physics Research, B

Volumn 1, Issue 2-3, 1984, Pages 383-386

Effects of BIAS on radiation induced defects in mos oxides: An ESR study

(1) Carlos, W E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644311886 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(84)90096-X Document Type: Article

Times cited : (10)

References (17)

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3
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- For a review see
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4
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6
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- Electron Spin Resonance in SiO2Grown on Silicon
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7
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- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
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- Nishi¹

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- Poindexter¹ Caplan²

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11
- 0001201305
- Radiation-Induced Defect Centers in Thermally Grown Oxide Films
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- Marquardt¹ Sigel²

12
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13
- 0020253294
- Radiation-Induced Paramagnetic Defects in MOS Structures
- (1982) IEEE Transactions on Nuclear Science , vol.29 NS , pp. 1459
- Lenahan¹ Dressendorfer²

14
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- Passage Effects in Paramagnetic Resonance Experiments
- For a detailed review of passage effects in ESR, see, The conditions used in this work satisfy Weger's case 7
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- Weger¹

15
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- Annealing of MOS Capacitors with Implications for Test Procedures to Determine Radiation Hardness
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- Winokur¹ Boesch²

16
- 0018431344
- (1979) J. Non-Cryst. Sol. , vol.32 , pp. 313
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17
- 0000244065
- (1979) Phys. Rev. Lett. , vol.42 , pp. 1346
- Friebele¹ Griscom² Stapelbroek³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.