Electroluminescence from ZnSTe:Al alloy and investigation of local current distributions by conducting atomic force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 14-18

  Mao, J M ^a,b   Sou, I K ^b   Xu, J B ^a   Wilson, I H ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; LUMINESCENT DEVICES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACES; THIN FILMS;

BLUE LIGHT EMISSION; CONDUCTING ATOMIC FORCE MICROSCOPY; CURRENT DISTRIBUTION; OPTICAL MICROSCOPE; ZINC SULFUR TELLURIDE;

ELECTROLUMINESCENCE;

EID: 11644259277     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589771     Document Type: Article

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16. The EL spectrum remains unchanged at different junction current levels.