Deposition and properties of titanium nitride films obtained by TiCl4 ammonolysis in the LPCVD process

Russian Microelectronics

Volumn 27, Issue 3, 1998, Pages 183-187

  Erkov, V G ^a   Devyatova, S F ^a   Golod, I A ^a   Timofeeva, G V ^a   Pokrovskii, L D ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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EID: 11644255824     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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9. Nakanishi, N., Mori, S., and Kato, E., Kinetics of Chemical Vapor Deposition of Titanium Nitride, J. Electrochem. Soc., 1990, vol. 137, no. 1, pp. 322-328.
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