Photoelectron spectroscopy of molecular-beam epitaxially grown BeTe/ZnSe and BeTe/GaAs heterostructures

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 173-177

  Nagelstrasser M ^a   Droge H ^a   Fischer, F ^a   Litz, T ^a   Waag, A ^a   Landwehr, G ^a   Steinruck H P ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

BeTe; GaAs; Photoelectron spectroscopy; Semiconductor heterostructure; Valence band offset; ZnSe

Indexed keywords

EID: 11544339988     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80316-3     Document Type: Article

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