2D Monte Carlo simulation of hole and electron transport in strained Si

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 167-171

  Formicone, Gabriele F ^a,b   Vasileska, Dragica ^a   Ferry, David K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11544332228     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/67849     Document Type: Article

References (9)

1. x substrates, Phys. Rev. B 48, 14276 (1993).
2. x, Phys. Rev. B 43, 12 634 (1991).
3. G. Dresselhaus, A. F. Kip, and C. Kittel, Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals, Phys. Rev. B 98, 368 (1955).
4. G. E. Pikus and G.L. Bir, Effect of Deformation on the Hole Energy Spectrum of Germanium and Silicon. Sov. Phys.-Solid State 1, 1502 (1959).
5. D. Vasileska-Kafedziska, Ph.D. Thesis, Arizona State University, December 1995.
6. D. K. Ferry, Semiconductors, New York: Macmillan Publishing Company, 1991.
7. J. J. Welser, Ph.D. Thesis, Stanford University, December 1994.
8. J. Hoyt, private communication.
9. P. Vogl, private communication.