CVD deposition and characterisation of highly conductive ZnO

Materials Science Forum

Volumn 287-288, Issue , 1998, Pages 339-342

  Hahn, B ^a   Worz M ^a   Heindel, G ^a   Pschorr Schoberer, E ^a   Gebhardt, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

CVD; Doping; PES; Valence Band Offsets; ZnO

Indexed keywords

EID: 11544271019     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.287-288.339     Document Type: Article

References (12)

1. D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, T. Goto, Appl. Phys. Lett 70(17) (1997)]
2. R.S. William, CVD of nonmetals, VCH (1996)
3. M. Ambia, M. Islam, M. Obaidul Hakim, Solar Energy Materials and Solar Cells 28(1992) p. 103
4. B. Hahn, G. Heindel, E. Pschorr-Schoberer, W. Gebhardt, submitted to Semicond. Sci Tech.
5. M. Wörz, R. Flierl, M. Hampel, B. Hahn, B. Buda, H. Preis, W. Gebhardt to be published
6. F.A. Kröger, The Chemistry of imperfect Crystals, Vol. 2, North Holland.H. Publishing Company, 1974
7. J.Y.W. Seto, J. A. Phys. 46(12) (1975) p.5247
8. A.P. Roth, D.F. Williams, J. Appl. Phys. 52(11) (1981), p.6685
9. M.L. Tarng, J. Appl. Phys. 49(7) (1978), p.4069
10. M. Wörz, M. Hampel, R. Flierl, W. Gebhardt, Acta Phys. Pol. A (1996), p.90
11. M. Wörz, E. Griebl, Th. Reisinger, R. Flierl, B. Haserer, T. Semmler, T. Frey, W. Gebhardt, Phys. stat. sol (b) 202 (1997), p. 805
12. A. D. Katnani, G. Margeritondo, Phys. Rev. B 28 (1983), p. 1944